Static random access memory having structure of first-, second-

Details Static random access memory having structure of first-, second- Static random access memory having structure of first-, second-

1987-01-29

1988-11-15

James, Andrew J.

357 59, 357 71, H01L 2710, H01L 2904, H01L 4902, H01L 2940

Patent

active

047853425

ABSTRACT:
A resistance element having a reduced occupied area and a high resistance which may be employed as a load resistor used in, for example, a static memory device. A high-resistance area is formed using a relatively thin film, while an interconnection area is formed using a relatively thick film, and these films are provided in such a manner that the thin film is in contact with the upper side of the thick film (the relatively thick film is a first-level film, and the relatively thin film is a second-level film).

REFERENCES:
patent: 4370798 (1983-02-01), Lien et al.
patent: 4528582 (1985-07-01), Cohen et al.

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