Static-random-access memory cell with trench transistor and enha

Details Static-random-access memory cell with trench transistor and enha Static-random-access memory cell with trench transistor and enha

1995-01-03

1997-12-16

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

257903, 257622, 437 93, H01L 2904, H01L 2120

Patent

active

056988931

ABSTRACT:
A static-random-access memory (SRAM) cell has been devised which contains an access transistor having a first channel region with a first surface that lies along a first crystal plane; and a trench driver transistor having a second channel region with a second surface that lies along a second crystal plane. The first and second crystal planes belong to a single family of equivalent crystal planes, for example, the {100} family of planes. Orienting the surfaces of the channel regions of the two transistors in this fashion improves the beta ratio of the driver and access transistors and thus greatly improves the cell stability. The .beta. ratio is the ratio of the transconductances of the driver and access MOSFETs, or ##EQU1## and preferably has a value of at least three. Using a trench driver transistor improves the bit cell capacitance.

REFERENCES:
patent: 3860948 (1975-01-01), Ono et al.
patent: 4603473 (1986-08-01), Suemitsu
patent: 4794561 (1988-12-01), Hsu
patent: 4890144 (1989-12-01), Teng et al.
patent: 5171703 (1992-12-01), Lin et al.
patent: 5285093 (1994-02-01), Lage et al.
patent: 5324960 (1994-06-01), Pfiester et al.
patent: 5384473 (1995-01-01), Yoshikawa et al.
patent: 5416736 (1995-05-01), Kosa et al.
Stiffler, et al.; "Oxidation-Induced Defect Generation in Advnaced DRAM Structures;" IEEE Trans. on Electron Devices; vol. 37; No. 5; pp. 1253-1257 (May 1990).
Construction Analysis of Samsung KM44C4100J-7 16-Meabit DRAM; Integrated Circuit Engineering Corp. (1961). Dec. 1991.
Wolf et al.; Silicon Processing for the VLSI Era; vol. 1; Lattice Press; p. 5 (1986). Dec. 1986.
Ghandhi; VLSI Fabrication, Principles; John Wiley & Sons; pp. 10-12 (1983). Dec. 1983.
Sze; VLSI Technology; Bell Telephone Laboratories, pp. 15, 461-465, and 601 (1983). Dec. 1983.
Sze; Physics of Semiconductor Devices; John Wiley & Sons; pp. 385386 (1981). Dec. 1981.
Colclaser; Microelectronics: Processing and Device Design; John Wiley & Sons; pp. 75, 255, and 263-264 (1980). Dec. 1980.
Yang; Fundamentals of Semiconductor Devices; McGraw-Hill Book Co.; pp. 210-211 (1978). Dec. 1978.

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