Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-10-28
1998-08-11
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 66, 365188, H01L 2976, H01L 31036, H01L 31112, G11C 1136
Patent
active
057930597
ABSTRACT:
A static random access memory cell having a plurality of active regions defined on a semiconductor substrate, includes a plurality of first bulk transistors having a first common gate electrode and first impurity-doped regions, the first common gate electrode and first impurity-doped regions being formed on a portion of the active regions; a plurality of second bulk transistors spaced from the first bulk transistors, the second bulk transistors including a second common gate electrode and second impurity-doped regions, the second common gate electrode and second impurity-doped regions being formed on a portion of the active regions; and a plurality of thin film transistors formed on the second bulk transistors and including the second common gate electrode and a conductive layer formed above the second common gate electrode, wherein the conductive layer overlaps and is substantially coextensive with the second common gate electrode.
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Giordana Adriana
LG Semicon Co. Ltd.
Thomas Tom
LandOfFree
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