Static random access memory cell

Details Static random access memory cell Static random access memory cell

1990-11-01

1992-11-10

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

365154, 257903, H01L 2702, H01L 2713, H01L 2904, G11C 1100

Patent

active

051628899

ABSTRACT:
A semiconductor IC having static memory cells comprised of a first pair of MIS transistors with channels fabricated on a surface of a semiconductor substrate, and a second and third pair of MIS transistors with channels fabricated on a layer of semiconductor thin film that is on top of a insulating layer, the third pair of MIS transistors are fabricated on top of the second pair of MIS transistors through a first insulating layer such that a portion of the thickness of the first insulating layer which makes contact with the channels of the second or third pair of MIS transistors is thicker than the gate insulating of the second and third pair of MIS transistors, and has a metal interconnect for a pair of bit lines which are fabricated on the third pair of MIS transistors through a second insulating layer as well as that part of the thickness of the second insulating layer that makes contact with channels of the third pair of MIS transistors and is thicker than the gate insulating of the third pair of MIS transistors.

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