Static memory

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 42, 357 237, 357 4, 365154, 365182, H01L 2702, H01L 2701, H01L 2712, G11C 1134

Patent

active

051574748

ABSTRACT:
A static memory in which polysilicon thin film transistors serve as load elements in a memory cell, and the gate electrodes of the polysilicon thin film transistors are formed of diffusion regions. In the static memory, high quality uniform TFTS are formed, and the oxidation films of the TFTs can be thin, without using a complex manufacturing technique.

REFERENCES:
patent: 4633438 (1986-12-01), Kume et al.
patent: 4920391 (1990-04-01), Uchida
IBM Technical Disclosure Bulletin, vol. 18, #12, pp. 3947-3948, May 1976 by Garnache.

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