Static load for high voltage driver

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307571, 307581, H03K 301, H03K 17687

Patent

active

044968531

ABSTRACT:
A static load for a high voltage driver includes first and second depletion mode field effect transistors and a diode-connected enhancement mode field effect transistor. The static load is arranged with a switching transistor to form a high voltage driver circuit. When the output of the driver circuit is at a relatively low potential, current drawn from the high voltage power supply is substantially reduced by applying a source to gate potential through the diode-connected transistor to one of the depletion mode transistors below the threshold voltage of the depletion mode transistor.

REFERENCES:
patent: 4000429 (1976-12-01), Yoshida et al.
patent: 4069430 (1978-01-01), Masuda
patent: 4446381 (1984-05-01), Dalrymple

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