Static induction type thyristor

Details Static induction type thyristor Static induction type thyristor

1976-10-19

1978-04-25

Miller, Jr., Stanley D.

Optical: systems and elements

Prism

With reflecting surface

359 20, 359 21, 359 22, 359 56, 359 58, H01L 2974

Patent

active

040866114

ABSTRACT:
The disclosed thyristor comprises an n.sup.- semi-conductor layer, a p.sup.- semiconductor layer disposed on one surface of the n.sup.- layer to form a pn junction between them, an n.sup.+ and a p.sup.+ semiconductor layer disposed on the other surfaces of the n.sup.- and p.sup.- layers respectively to serve as main electrodes and a p.sup.+ and a n.sup.+ apertured gate layers disposed within the n.sup.- and p.sup.- layers respectively and provided with a gate electrode. An intrinsic semiconductor layer may be substituted for the n.sup.- and p.sup.- layers. A process of producing such a thyristor is also disclosed.

REFERENCES:
patent: 3409812 (1968-11-01), Zuleeg
patent: 3571675 (1971-03-01), Faust

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