Static induction type semiconductor device with multiple source

Details Static induction type semiconductor device with multiple source Static induction type semiconductor device with multiple source

1992-05-01

1994-04-19

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257135, 257264, 257268, H01L 2974

Patent

active

053048229

ABSTRACT:
A static induction type semiconductor device of a surface gate type, includes a source region, gate region and drain region. A channel region is formed between the drain region and the source region, such that when a bias potential is applied between the gate region and the source region, carriers flow to the drain region from the source region via the channel region. A source electrode is provided on the semiconductor layer. A source contact region is provided between the source electrode and the source region to establish electrical connection therebetween. The source contact region is segmented into a plurality of smaller regions or sections whose total area is smaller than the area of the corresponding portion of the source region, for improving the current gain, and for preventing or significantly reducing local current concentration.

REFERENCES:
patent: 4700213 (1987-10-01), Nishizawa
patent: 4811064 (1989-03-01), Nishizawa et al.
patent: 5175598 (1992-12-01), Nishizawa et al.

Affiliated with

Also associated with

Rating

Static induction type semiconductor device with multiple source does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static induction type semiconductor device with multiple source , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static induction type semiconductor device with multiple source will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-21747