Patent
1990-08-02
1991-02-19
James, Andrew J.
357 36, 357 22, H01L 2978, H01L 2972, H01L 2980
Patent
active
049948709
ABSTRACT:
A static induction type semiconductor device is used as a power transistor. It is of the surface gate type and is used for providing a high current density. The static induction type semiconductor device provides a plurality of small source regions surrounded by a gate region. According to this structure, the channel region beneath the source region becomes small, thereby increasing the stored carrier density and enabling a large main current to flow when using a small gate current, thereby achieving a high current amplification ratio. Further, when it flows the main current is distributed to the source regions, thus preventing increase in on-voltage.
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Aoki Shinobu
Sugiyama Susumu
Suzuki Takashi
Tadano Hiroshi
Takagi Haruo
James Andrew J.
Kabushiki Kaisha Toyoda Jidoshokki Seisakusho
Kabushiki Kaisha Toyota Chuo Kenkyusho
Monin Don
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