Static induction type semiconductor device

Details Static induction type semiconductor device Static induction type semiconductor device

1988-04-13

1991-03-05

Hille, Rolf

357 38, 357 86, 357 92, 357 234, H01L 2980, H01L 2910, H01L 2974, H01L 4900

Patent

active

049981498

ABSTRACT:
Disclosed is an improvement of a static induction type semiconductor device which includes an anode region provided at one surface portion of a semiconductor substrate, a cathode region provided on the other surface portion, a gate region adjacent to the cathode region and a low impurity density region formed at an intermediate portion of the semiconductor substrate. A cathode short region is provided at a position opposite to the cathode region with the gate region therebetween so as to be conducted to the cathode region, thereby quickening the injection of charge at the time of turn-on and draw up of charge at the time of turn-off, and enabling high-speed on and off operation.

REFERENCES:
patent: 4270059 (1981-05-01), Nishizawa et al.
patent: 4450467 (1984-05-01), Nagano
patent: 4587547 (1986-05-01), Amemiya
patent: 4635086 (1987-01-01), Miwa
patent: 4772926 (1988-09-01), Nishizawa et al.

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