Static induction transistor and its applied devices

Details Static induction transistor and its applied devices Static induction transistor and its applied devices

1978-06-29

1981-08-18

Wojciechowicz, Edward J.

357 15, 357 23, 357 41, 357 45, H01L 2980

Patent

active

042849977

ABSTRACT:
In a static induction transistor, the gate structure is split into two separate gates facing each other to cooperatively define therebetween a channel or channels of this transistor. One of these two separate gates is operative as a driving gate for driving the transistor in response to a driving signal applied thereto, while the other one is operative as a non-driving gate which has no driving signal applied. The non-driving gate may be held at a certain potential or floated. Such split-gate structure provides a higher operating speed of the transistor, and can be effectively applied to semiconductor memory devices.
In such a memory device having split-gate structures, a plurality of field effect type semiconductor memory cells are formed perpendicular to a surface of a semiconductor wafer to enhance a high packing density of the memory device. Charge carriers are transported in the semiconductor bulk through channels defined by the split-gate structure, thereby enhancing a high-speed operation of the memory device.

REFERENCES:
patent: 3828230 (1974-08-01), Nishizawa et al.
patent: 4048646 (1977-09-01), Ogawa et al.

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