Static induction transistor

Details Static induction transistor Static induction transistor

2007-03-06

2007-03-06

Pizarro-Crespo, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S285000, C257SE29243

Reexamination Certificate

active

10732839

ABSTRACT:
A transistor switch for a system operating at high frequencies is provided. The transistor switch comprises a graded channel region between a source region and a drain region, the graded channel region configured for providing a low resistance to mobile negative charge carriers moving from the source region to the drain region, wherein the graded channel comprises at least two doping levels.

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patent: 5903020 (1999-05-01), Siergiej et al.
patent: 5945701 (1999-08-01), Siergiej et al.
patent: 2003/0116792 (2003-06-01), Chen et al.
patent: 2003/0178672 (2003-09-01), Hatakeyama et al.
Y. Uesugi, et al, “Generation of high heat flux plasmas by high power rf heating in the divertor plasma simulator NAGDIS-II”, Vacuum 59 (2000) pp. 24-34.
Y.M. Sung et al, “A review of SiC Static induction transistor development for high frequency power amplifiers”, Solid-State Electronics 46 (2002) pp. 605-613.
S. Ortolland et al, “Optimisation of a power 4H-SiC SIT device for RF heating applications”, Materials Science and Engineering B 61-62 (1999) pp. 411-414.

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