Static induction thyristor with stepped-doping gate region

Details Static induction thyristor with stepped-doping gate region Static induction thyristor with stepped-doping gate region

1984-10-01

1987-03-31

Clawson, Jr., Joseph E.

357 20, 357 38, 357 43, 357 86, 357 89, H01L 2980

Patent

active

046546790

ABSTRACT:
A static induction thyristor having buried gate region having the concentration distribution of the impurity to have at least one stepwise variation viewed from the surface of the gate for improving dv/dt capability and for allowing more tolerance in the accuracy in the over-etching and also for keeping variation of the gate resistance small. A static induction thyristor having buried gate region and having the high concentration layer given selective junction depth and to make shallow for the location situated above or below the gate region and may be provided with insulating layer between anode or cathode electrode for further improving dv/dt capability and also the gate loss at turn-on in high frequency operation and for improving manufacturing yield.

REFERENCES:
patent: 4216029 (1980-08-01), Ohki
patent: 4275408 (1981-06-01), Yukimoto
patent: 4345266 (1982-08-01), Owyawg
patent: 4364072 (1982-12-01), Nishizawa

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