Static induction thyristor

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357 20, 357 55, H01L 2974, H01L 2906

Patent

active

049840495

ABSTRACT:
A static induction thyristor having a mesh like gate region in front of the cathode, and between the gate region and the cathode a high resistance region having effective impurity concentration of 10.sub.11 cm.sup.-3 -5.times.10.sup.14 cm.sup.-3 is interposed, and the voltage gain decided by the gate length, gate interval and the gate-to-anode distance is made 10 or more so that the forward voltage drop is small, providing high speed switching ability and a large reverse breakdown voltage.

REFERENCES:
patent: 4086611 (1978-04-01), Nishizawa et al.
patent: 4170019 (1979-10-01), Hysell et al.
patent: 4171995 (1979-10-01), Nishizawa et al.
patent: 4198645 (1980-04-01), Nishizawa
patent: 4223328 (1980-09-01), Terasawa et al.
patent: 4364072 (1982-12-01), Nishizawa

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