Static induction semiconductor device with a static induction sc

Details Static induction semiconductor device with a static induction sc Static induction semiconductor device with a static induction sc

1994-04-18

1996-08-13

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257136, 257138, 257264, 257266, 257471, H01L 2980, H01L 2974, H01L 31112, H01L 27095

Patent

active

055459056

ABSTRACT:
The present invention is to provide a Static Induction semiconductor device with a Static Induction Schottky shorted structure where the main electrode region is composed of regions of higher and lower impurity densities relative to each other, the main electrode forms an ohmic contact with the higher impurity density region and also forms a Schottky contact with a Static Induction Schottky shorted region of the lower impurity density region surrounded by tile higher impurity density region, and it is excellent in turn-off performance and easy to use, by substantially reducing tile minority carrier storage time, the fall time and the quantity of gate pull-out charges in order that charges may easily be pulled out from the cathode or source electrode as well as from the gate electrode at turn-off.

REFERENCES:
patent: 5418376 (1995-05-01), Muraoka et al.
Maeda et al. Fast-Switching-Speed, Low-Forward-Voltage-Drop Static Induction (SI) Thyristor T.IEE Japan, vol. 115-D No. 7, '95.
Abe et al. Low-Loss, High Efficiency, Planar-Gate Normally-Off Type Static Induction (SI) Thyristor PCIM'88 Proceedings 165.

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