Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1993-03-02
1994-06-21
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257132, 257154, 257162, 257332, 257334, H01L 2974, H01L 2910, H01L 2978
Patent
active
053230299
ABSTRACT:
A static induction device (SI device) at least shares a structure in which an SI thyristor, an IGT and a capacitor are merged onto the single monolithic chip. The SI thyristor has a cathode, an anode and a gate regions, and a channel. The IGT has a well on a surface of the channel, a source and drain regions within the well, a gate insulating film on the well, and a gate electrode on the gate insulating film. The capacitor comprises the gate region of the SI thyristor, the gate insulating film on the gate region, and the gate electrode. The cathode and the drain region are connected to each other through a high-conductive electrode.
REFERENCES:
patent: 4574310 (1986-03-01), Nishizawa et al.
patent: 4631592 (1986-12-01), Nishizawa
patent: 5001535 (1991-03-01), Nishizawa et al.
patent: 5038188 (1991-08-01), Nishizawa et al.
patent: 5086330 (1992-02-01), Minato
Ngo Ngan
Zaidan Hojin Handotai Kenkyu Shinkokai
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