Static frequency divider with low power supply

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Frequency or repetition rate conversion or control

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C327S115000

Reexamination Certificate

active

10875351

ABSTRACT:
A static frequency divider circuit includes a first and second latch connected in series and a feedback path. Each of the latches includes a reading branch and a latching branch. The divider circuit further includes an inter-latch circuit that is connected between the latching branch of the first latch and the reading branch of the second latch. The inter-latch circuit is connected so as to reduce the current needs of the latching branches in both the first and second latches.

REFERENCES:
patent: 4730349 (1988-03-01), Wilhelm et al.
patent: 5754062 (1998-05-01), Satoh et al.
patent: 5844437 (1998-12-01), Asazawa et al.
patent: 5900760 (1999-05-01), Lee
patent: 5969556 (1999-10-01), Hayakawa
patent: 6218878 (2001-04-01), Ueno
patent: 6268752 (2001-07-01), Takahashi et al.
patent: 6285262 (2001-09-01), Kuriyama
patent: 6593782 (2003-07-01), Pierschel et al.
patent: 6903579 (2005-06-01), Rylov et al.
patent: 5-167402 (1993-07-01), None
L. Masini et al., “A Low Voltage 12-GHz Silicon-Germanium Status Frequency Divider with a Selectable Division Ratio”, Italy (date unknown).
S. Blueler et al., “A Static Frequency Divider in InP-DHBT Technology for Process Control”, Diploma Thesis, Swiss Federal Institute of Technology Zurich, Mar. 2002.
Martin Wurzer, “TP 12.6 53GHz Static Frequency Divider in a Si/SiGe Bipolar Technology,” ISSCC 2000/Session 12/Frequency Synthesizers and Dividers/Paper TP 12.6, pp. 206-207, 0-7803-5853-Aug. 2000.
J. Bock et al., “Sub 5 ps SiGe Bipolar Technology” IEDM, 0-7803-7462-Feb. 2002 pp. 763-766.
R. Hayami et al., “40 GHz 7.9mW low-power frequency divider IC using self-aligned selective-epitaxial-growth SiGe HBTs” IEEE Electronic Letters, vol. 38, No. 14, pp. 707-709, Jul. 4, 2002.
K. Ishii, et al., “Very-High Speed Si Bipolar Static Frequency Dividers with New T-Type Flip-Flops”, IEEE Journal of Solid-State Circuits, vol. 30, No. 1, Jan. 1995, pp. 19-24, 0028-9200/95504.00.
M. Mokhtari, “100+ GHz Static Divide-By-2 Circuit in InP-DHBT Technology” IEEE 2002 GaAs Digest, pp. 291-293.
G. Ritzberger, “38 GHz Low-Power Static Frequency Divider in SiGe Bipolar Technology”, IEEEE 2002, vol. 4, pp. 413-416, 0-7803-7448-Jul. 2002.
M. Sokolich, “A Low-Power 72.8-GHz Static Frequency Divider in A1InAs/InGaAs HBT Technology” IEEE Journal of Solid-State Circuits, vol. 36, No. 9, Sep. 2001, pp. 1328-1334.
K. Washio et al., “67-GHz Static Frequency Divider Using 0.2-am Self-Aligned SiGe HBTs” IEEE Transactions on Microwave Theory and Techniques, vol. 49, No. 1, Jan. 2001.
K. Washio et al., Ultra-High-Speed Scaled-down Self-Aligned SEG SiGe HBTs, IEEE 2002 pp. 767-770.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Static frequency divider with low power supply does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static frequency divider with low power supply, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static frequency divider with low power supply will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3738021

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.