Static bipolar random access memory

Details Static bipolar random access memory Static bipolar random access memory

1981-02-13

1983-08-23

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 15, 357 46, 357 50, 357 92, 365156, 365181, H01L 2710, G11C 1140

Patent

active

044007124

ABSTRACT:
A static bipolar random access memory employs a novel layout for high packing density. Each cell uses a cross-coupled pair of NPN vertical transistors as drivers merged with a pair of PNP lateral transistors as loads, Schottky diode coupling to the input/output lines and Schottky diode clamping of the internal nodes. The PNP transistors are also partially merged between cells to conserve space. OXIL technology is used to achieve high gain vertical transistors and to provide dielectric isolation.

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