State retention power gating latch circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Particular stable state circuit

Reexamination Certificate

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Details

C327S203000, C327S208000, C327S218000

Reexamination Certificate

active

11125462

ABSTRACT:
A method of power gating a latch including detecting a state of the latch, detecting a power gate signal, providing power to the latch while the power gate signal is negated, and removing power from the latch when the power gate signal is asserted and the latch is in a predetermined state. The method may include any one or more of pulling a node of the latch to a selected state while the power gate signal is asserted to ensure that the latch powers up in the predetermined state, providing a signal indicative of the latch state and the power gate signal to respective inputs of a logic gate having an output indicative thereof, switching a supply voltage to a power input of the latch based on a state of the output of the logic gate, and closing a switch to pull a node of the latch low.

REFERENCES:
patent: 5615162 (1997-03-01), Houston
patent: 6577153 (2003-06-01), Kodama
patent: 6836175 (2004-12-01), Morikawa
patent: 2004/0008071 (2004-01-01), Ko et al.
patent: 2004/0213050 (2004-10-01), Fukuoka et al.
patent: 2004/0266092 (2004-12-01), Aksamit
patent: 2005/0218952 (2005-10-01), Padhye et al.
Satoski Shigematsu,A 1-V High Speed MTCMOS Circuit Scheme for Power-Down Application Circuits,IEEE Journal of Solid-State Circuits, vol. 32, No. 6, Jun. 1997.
Paul S. Levy,Power-Down Intergrated Circuit Built-In Self-Test Structures,IEEE VLSI Test Sumposium, Paper 2.1 1991, pp. 30-33.

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