Starter current source device with automatic shut-down capabilit

Details Starter current source device with automatic shut-down capabilit Starter current source device with automatic shut-down capabilit

1998-11-19

2000-06-20

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257543, 257268, H01L 2980, H01L 2900

Patent

active

060780940

ABSTRACT:
An analog circuit starter current source device with automatic shut-down capability. The device includes a semiconductor substrate (typically p-type) with a deep well region (typically n-type) below its surface, a first surface well region (typically n-type) on the surface of the substrate that circumscribes the deep well region, and a narrow channel region (typically p-type) separating the deep well region from the first surface well region. The device also includes a first contact region for connecting the first surface well region to the analog circuit, and a second contact region for connecting a substrate region above the deep well to the analog circuit. The configuration provides a variable-width vertical resistor current path capable of starting an analog circuit and then being automatically shut-down by application of a potential to the first contact region sufficient to produce a depletion region that pinches-off the narrow channel region. A process for forming the starter current source device is also provided. The process includes first providing a semiconductor substrate (e.g. p-type), then forming a deep well region (e.g. n-type) below its surface. This is followed by the formation of a first surface well region (e.g. n-type) on the surface of the substrate such that the first surface well region circumscribes the deep well region, thereby producing a narrow channel (e.g. p-type) therebetween. Finally, a first contact region is formed on the surface of the first surface well region, while a second contact region is formed on the surface of semiconductor substrate above the deep well region.

REFERENCES:
Phillip E. Allen, et al., Current and Voltage References, in CMOS Analog Circuit Design, Oxford University Press, 1987, pp. 241-251.
Paul R. Gray, et al., Transistor Current Sources and Active Leads, in Analysis and Design of Analog Integrated Circuits, 3rd Edition, John Wiley & Sons, Inc., 1993, pp. 326-331.

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