Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2007-01-11
2010-02-16
Tang, Minh N (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S520000
Reexamination Certificate
active
07663394
ABSTRACT:
A variation of a threshold of diode-connected transistors is compensated for to maintain a constant rectification efficiency of a rectifier circuit, thereby enabling stable detection of a start signal. A constant voltage is applied to DC bias terminal103of cascaded half-wave voltage doubler rectifier circuits (including MOS transistors M1to M4and capacitors C1to C4) forming a rectifier circuit, and a voltage equal to the sum of the constant voltage applied to DC bias terminal103and a variation ΔVt of a threshold voltage of the MOS transistors is applied to DC bias terminal104of cascaded half-wave voltage doubler rectifier circuits (including MOS transistors M5to M8and capacitors C5to C8) forming a bias circuit.
REFERENCES:
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F. Dickson, “On-chip high-voltage generation in MNOS integrated circuits using an inproved voltage multiplier technique”, IEEE Journal of Solid-State Circuits, 1976, vol. 11, No. 3, p. 374-378.
Maeda Tadashi
Yamase Tomoyuki
NEC Corporation
Nguyen Trung Q
Tang Minh N
Young & Thompson
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