Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2007-12-18
2007-12-18
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257S208000, C257S508000, C257S758000, C257SE27011, C716S030000, C716S030000
Reexamination Certificate
active
11142378
ABSTRACT:
To prevent the potential inversion of a dynamic node attributed to the fact that any wiring line among standard cells as is made of a wiring layer at the same level as that of the dynamic node within a standard cell is laid in adjacency to the dynamic node.In adjacency to a dynamic node101within a standard cell, shield wiring lines102aand102bwhich are made of wiring layers at the same level as that of the dynamic node are laid so as to prevent any wiring line among standard cells from passing in adjacency to the dynamic node. The shield wiring lines can be replaced with a shield region or a wiring inhibition region.
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patent: 2003/0095429 (2003-05-01), Hirose et al.
patent: 2004/0145033 (2004-07-01), McElvain
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Chinese Office Action, with English Translation, issued in Chinese Patent Application No. CN 2005100747650, mailed May 25, 2007.
Kimura Noriyuki
Nakata Mika
Nozoe Mitsushi
Ho Tu-Tu
McDermott Will & Emery LLP
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