Stamp for a lithographic process

Etching a substrate: processes – Masking of a substrate using material resistant to an etchant

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216 44, 216 48, 216 54, 438745, 438749, B44C 122

Patent

active

058172424

ABSTRACT:
A hybrid stamp structure for lithographic processing of features below 1 micron is described, comprising a deformable layer (14) for accommodating unevenness of the surface of a substrate, and a patterned layer on the deformable layer in which a lithographic pattern is engraved. The stamp structure is further enhanced by comprising a third layer (16), which acts as rigid support for the stamp, thus preventing an undesired deformation of the stamp under load.

REFERENCES:
patent: 5512131 (1996-04-01), Kumar et al.

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