Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Patent
1996-08-01
1998-10-06
Chapman, Mark
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
216 44, 216 48, 216 54, 438745, 438749, B44C 122
Patent
active
058172424
ABSTRACT:
A hybrid stamp structure for lithographic processing of features below 1 micron is described, comprising a deformable layer (14) for accommodating unevenness of the surface of a substrate, and a patterned layer on the deformable layer in which a lithographic pattern is engraved. The stamp structure is further enhanced by comprising a third layer (16), which acts as rigid support for the stamp, thus preventing an undesired deformation of the stamp under load.
REFERENCES:
patent: 5512131 (1996-04-01), Kumar et al.
Biebuyck Hans Andre
Michel Bruno
Chapman Mark
International Business Machines - Corporation
Trepp Robert M.
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