Staircase avalanche photodiode

Details Staircase avalanche photodiode Staircase avalanche photodiode

1994-04-07

1996-07-23

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257438, 257 13, 257 21, 257439, 257450, H01L 31107, H01L 310328, H01L 31072, H01L 31109

Patent

active

055392210

ABSTRACT:
An avalanche photodiode is provided which consists of a staircase APD with a periodic multilayer structure graded in composition from InAlAs to InGa.sub.x Al.sub.(1-x) As (x>0.1) as the multiplication layer to improve the dark current characteristic. Another photodiode with separate photoabsorption and multiplication regions is provided with an electric-field relaxation layer whose bandgap is wider than that of the photoabsorption and has a triple structure with a highly-doped layer sandwiched between lightly-doped layers. This photodiode incorporates in detail on an n-type InP substrate, an avalanche multiplication layer 13 of a periodic multilayer structure graded in composition from n.sup.- -InAlAs to InGa.sub.x Al.sub.(1-x) As, a p.sup.- -InGaAs photoabsorption layer 17, and an InP electric-field relaxation triple layer 16 consisting of n.sup.-, p.sup.+, and p.sup.- layers between the avalanche multiplication layer 13 and the photoabsorption layer 17.

REFERENCES:
patent: 4722907 (1988-02-01), Weil et al.
Wada et al., "Very High Speed GaInAs Metal-Semiconductor-Metal Photodiode Incorporating an AlInAs/GaInAs Graded Superlattice," Appl. Phys. Lett. vol. 54, No. 1, Jan. 2, 1989, pp. 16-17.
IEEE Electron Device Letters, vol. EDL-7, No. 4, Apr. 1986;Planar InP/InGaAs Avalanche Photodiodes with Preferential Lateral Extended Guard Ring;Kenko Taguchi, Toshitaka Torikai, Yoshimasa Sugimoto, Kikuo Makita, Hisahiro Ishirara;Sadao Fujita and Kouichi Minemura.
1895;Appl. Phys. Lett 57(18) , 29 Oct. 1990;InGaAs/InAIAs Superlattice Avalanche Photodiode with a Separated Photoabsorption Layer;Toshiaki Kagawa, Yuichi Kawamura, Hiromitsu Asai, and Mitsura Naganuma.
IEE Transactions On Electron Devices, vol. Ed-30, No. 4, Apr. 1983; Staircase Solid-State Photomultipliers and Avalanche Photodiodes with Enhanced Ionization Rates Ratio; Federico Capasso, Won-Tien Tsang and Gareth F. Williams.
Electronics Letters 2nd Aug. 1984; vol. 20 No. 16; High-Speed Planar-Structure InP/InGaAsP/InGaAs Avalanche Photodiode Grown by VPE.

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