Staggered bandgap gate field effect transistor

Details Staggered bandgap gate field effect transistor Staggered bandgap gate field effect transistor

1990-02-16

1990-10-09

Hille, Rolf

357 16, H01L 29161, H01L 2980

Patent

active

049624091

ABSTRACT:
A field effect transistor having a highly doped gate wherein both the gate and the channel are different semiconductors with an energy band relationship that provides a barrier to both electrons and holes. The energy band relationship is staggered so that tunneling of electrons from the channel into the gate and holes from the gate into the channel is suppressed. An example structure is an InP light p conductivity type channel with a heavily doped AlInAs p.sup.++ conductivity type gate.

REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4625225 (1986-11-01), Goodfellow et al.
R. Leheny et al., "An IN.sub.0.53 Ga.sub.0.47 AS JFET", IEEE Elec. Dev. Lett., vol. EDL-1, #6, Jun. 1980, pp. 110-111.
"GaAs FET With a Degenerate Semiconductor Gate", Y. Umemoto et al., IEDM's Technical Digest, Washington, D.C., Dec. 1-4, 1985, pp. 86-89.

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