Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1993-12-03
1995-10-24
Kunemund, Robert
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
20429815, 20429831, 20429834, 118723E, 118725, 118728, 216 67, C23F 102, C23C 1652, C23C 1450
Patent
active
054606845
ABSTRACT:
The plasma etching apparatus for a semiconductor wafer includes a susceptor provided in the vacuum process chamber. An electrostatic chuck for attracting and holding the wafer is provided on the susceptor. The electrostatic chuck comprises a chuck electrode provided on the susceptor via an insulative layer. The chuck electrode is connected to the positive terminal of the DC power supply via a switch. The chuck electrode is coated with a resistive layer, and the wafer is placed directly on the resistive layer. The resistive layer exhibits an electric resistivity of 1.times.10.sup.10 .OMEGA..multidot.cm to 1.times.10.sup.12 .OMEGA..multidot.cm in a temperature range for etching. The resistive layer is formed to have such a surface roughness that a center line average hight falls within a range of 0.1 to 1.5 .mu.m. When the potential of the positive terminal of the DC power supply is applied to the chuck electrode, and the wafer is grounded via plasma, a contact potential difference is created between the surface of the resistive layer and the rear surface of the wafer, generating an electrostatic attractive force, so that the wafer is attracted and held by the resistive layer.
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Asakawa Teruo
Kondo Masaki
Masuoka Noboru
Saeki Hiroaki
Kunemund Robert
McDonald Rodney G.
Tokyo Electron Limited
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