Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-01-31
2006-01-31
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S528000, C438S381000
Reexamination Certificate
active
06992366
ABSTRACT:
Disclosed is a stacked variable inductors manufactured by stacking M (M≧2) metal layers on a semiconductor substrate, and provides stacked variable inductors comprising, 1 to N inductors continuously connected in serial, wherein each of said inductors is formed on N (N≦M) metal layers that are different each other; first and second ports each connected to the highest positioned inductor and to the lowest positioned inductor among said 1 to N inductors; and at least one MOSFET, and wherein one terminal of at least one MOSFET is connected to one of the first and second ports, and the other one is connected to one of adjacent terminals connected in serial between 1 to N inductors.
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Alireza Zolfaghari, et al.; “Stacked Inductors and Transformers in CMOS Technology”; IEEE Journal of Solid-State Circuits; vol. 36, No. 4; Apr. 2001; pp. 620-628.
Chih-Chun Tang, et al.; “Miniature 3-D Inductors in Standard CMOS Process”; IEEE Journal of Solid-State Circuits; vol. 37, No. 4; Apr. 2002; pp. 471-480.
Kim Cheon Soo
Park Mun Yang
Park Pil Jae
Yu Hyun Kyu
Electronics and Telecommunications Research Institute
Mayer Brown Rowe & Maw LLP
Rose Kiesha
Trinh Michael
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