Stacked transistor method and apparatus

Amplifiers – With semiconductor amplifying device – Including plural stages cascaded

Reexamination Certificate

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C330S277000

Reexamination Certificate

active

10875405

ABSTRACT:
A method and apparatus is described for controlling conduction between two nodes of an integrated circuit via a stack of FETs of common polarity, coupled in series. In an RF Power Amplifier (PA) having appropriate output filtering, or in a quad mixer, stacks of two or more FETs may be used to permit the use of increased voltages between the two nodes. Power control for such RF PAs may be effected by varying a bias voltage to one or more FETs of the stack. Stacks of three or more FETs may be employed to control conduction between any two nodes of an integrated circuit.

REFERENCES:
patent: 4079336 (1978-03-01), Gross
patent: 4241316 (1980-12-01), Knapp
patent: 5032799 (1991-07-01), Milberger et al.
patent: 5041797 (1991-08-01), Belcher et al.
patent: 5375256 (1994-12-01), Yokoyama et al.
patent: 6107885 (2000-08-01), Miguelez et al.
patent: 6191653 (2001-02-01), Camp, Jr. et al.
patent: 6225866 (2001-05-01), Kubota et al.
patent: 6239657 (2001-05-01), Bauer
patent: 6297696 (2001-10-01), Abdollahian et al.
patent: 6308047 (2001-10-01), Yamamoto et al.
patent: 6380802 (2002-04-01), Pehike et al.
patent: 6396352 (2002-05-01), Muza
patent: 6449465 (2002-09-01), Gailus et al.
patent: 6509799 (2003-01-01), Franca-Neto
patent: 6934520 (2005-08-01), Rozsypal
patent: 2003/0032396 (2003-02-01), Tsuchiya et al.
patent: 2003/0224743 (2003-12-01), Okada et al.
patent: 2004/0121745 (2004-06-01), Meck
Raab, et al., “Power Amplifiers and Transmitters for RF and Microwave”, IEEE Transactions on Microwave Theory and Techniques, vol. 50, No. 3, pp. 814-826, Mar. 2002, USA.
Ueda, et al., “A 5GHz-Band On-Chip Matching CMOS MMIC Front-End”, 11th GAAS Symposium—Munich 2003, pp. 101-104, Germany.
Nelson Pass, Pass Labs, “Cascode Amp Design”, Audio Electrnoics, pp. 1-4, Mar. 1978.
Lester F. Eastman, P.I., “High Power, Broadband, Linear, Solid State Amplifier”, 16th Quarterly Rep. under MURI Contract No. N00014-96-1-1223 for period Jun. 1, 2000-Aug. 31, 2000, Sep. 2000, pp. 1-8.
Jeon, et al., “A New “Active” Predistorter with High Gain Using Cascode-FET Structures”, IEEE Radio Frequency Integrated Circuits Symposium, 2002, pp. 253-256.
Hsu, et al., “Comparison of Conventional and Thermally-Stable Cascode (TSC) AIGaAs/GaAs HBTs for Microwave Power Applications”, Jrnl of Solid-State Electronics, V. 43, Sep. 1999, 2 pages, U.S.A.
Kim, et al., “High-Performance V-Band Cascode HEMT Mixer and Downconverter Module”, IEEE Transactions on Microwave Theory and Techniques, vol. 51, No. 3, p. 805-810,Mar. 2003.
Mishra, et al., “High Power Broadband Amplifiers for 1-18 GHz Naval Radar” University of California, Santa Barbara, pp. 1-9, Jul. 1, 1998.
Schlechtweg, et al., “Multifunctional Integration Using HEMT Technology”, Fraunhofer Institute for Applied Solid State Physics, (date uncertain, believed Mar. 1997).
Rohde, et al., “Optic/Millimeter-Wave Converter for 60 Ghz Radio-Over-Fiber Systems”, Fraunhofer-Institut for Angewandte Festkörperphysik Freiburg i. Br., Apr. 1997, pp. 1-5.

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