Stacked semiconductor transistors

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Reexamination Certificate

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Details

C257S686000

Reexamination Certificate

active

06995473

ABSTRACT:
At least two switching devices each including a substrate formed of a wide bandgap semiconductor, source and gate electrodes formed in a principal surface side of the substrate, and a drain electrode formed on the back surface of the substrate are stacked so that respective upper surface sides of the switching face each other.

REFERENCES:
patent: 5793115 (1998-08-01), Zavracky et al.
patent: 6150724 (2000-11-01), Wenzel et al.
patent: 2001/0055838 (2001-12-01), Walker et al.
patent: 59107554 (1984-06-01), None

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