Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2010-10-08
2011-11-29
Roman, Jr., Angel (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S686000, C257S690000, C257S692000, C257S773000, C257SE23011
Reexamination Certificate
active
08067839
ABSTRACT:
Disclosed are a stacked semiconductor package and a method for manufacturing the same. The method for manufacturing a stacked semiconductor package includes preparing a substrate formed with a seed metal layer; laminating semiconductor chips having via holes aligned with one another on the seed metal layer to form a semiconductor chip module; and growing a conductive layer inside of the via holes using the seed metal layer to form a conductive growth layer inside of the via holes.
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Hynix / Semiconductor Inc.
Ladas & Parry LLP
Roman, Jr. Angel
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