Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2006-05-09
2006-05-09
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S723000, C257S726000, C257S727000
Reexamination Certificate
active
07042086
ABSTRACT:
A stacked semiconductor module encompasses (a) a upper switching element having a first semiconductor chip, a first top electrode disposed at a top surface of the first semiconductor chip, a first bottom electrode disposed at a bottom surface of the first semiconductor chip, and a first control electrode configured to control conduction between the first top and first bottom electrodes; (b) a first wiring plate disposed beneath the upper switching element, electrically connected to the first bottom electrode; and (c) a lower switching element disposed beneath the wiring plate, having a second semiconductor chip, a second top electrode disposed at a top surface of the second semiconductor chip, electrically connected to the first wiring plate, a second bottom electrode disposed at a bottom surface of the second semiconductor chip, and a second control electrode configured to control conduction between the second top and second bottom electrodes.
REFERENCES:
patent: 5891761 (1999-04-01), Vindasius et al.
patent: 2001/0052641 (2001-12-01), Kuo et al.
patent: 2002/0024129 (2002-02-01), Hirahara et al.
patent: 1 172 850 (2002-01-01), None
patent: P2001-298152 (2001-10-01), None
Hayashi Tetsuya
Shimoida Yoshio
Shinohara Toshiro
Yamagiwa Masanori
McDermott Will & Emery LLP
Ngo Ngan V.
Nissan Motor Co,. Ltd.
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