Stacked semiconductor device having peripheral through holes

Details Stacked semiconductor device having peripheral through holes Stacked semiconductor device having peripheral through holes

1995-12-11

1998-03-03

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

257685, 257777, 257700, 257774, 257693, 257723, H01L 2302, H01L 2348, H01L 2352, H01L 2940

Patent

active

057239010

ABSTRACT:
A semiconductor device for reducing the mounting area of semiconductor chips on the mounting substrate includes a first base substrate made of an insulating material, a semiconductor chip mounted on the first base substrate, a plurality of internal wiring elements disposed on the first base substrate, and a plurality of bonding elements respectively connecting the semiconductor chip and the internal wiring elements. A second base substrate made of an insulating material is disposed on the first base substrate, and a resin seals the semiconductor chip and the bonding elements. A plurality of lower electrodes are formed on a lower surface of the first base substrate, a plurality upper electrodes are formed on an upper surface of the second base substrates, and a plurality of through holes respectively connecting one of the lower electrodes to one of the upper electrodes are formed on an external side surface of the first and second base substrate.

REFERENCES:
patent: 4224637 (1980-09-01), Hargis
patent: 4956694 (1990-09-01), Eide
patent: 5172033 (1992-12-01), Bernardoni et al.
patent: 5334857 (1994-08-01), Mennitt et al.
patent: 5334875 (1994-08-01), Sugano et al.
patent: 5434745 (1995-07-01), Shokrgozar et al.

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