Stacked semiconductor device

Details Stacked semiconductor device Stacked semiconductor device

2006-05-23

2006-05-23

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257S723000, C257S737000

Reexamination Certificate

active

07049692

ABSTRACT:
A stacked semiconductor device is disclosed that has a three-dimensional structure using general-purpose semiconductor device units (semiconductor devices) that are stacked with an interposer substrate being provided between an upper device unit and a lower device unit. The upper device unit includes a semiconductor device, a first wiring substrate, and an external connection terminal. The lower device unit includes a semiconductor device, a second wiring substrate, and a connection electrode that is prepared on the upper surface of the second wiring substrate. The interposer substrate includes a circuit board, a first conductive material connecting to the connection electrode, a second conductive material formed in a form position of the external connection terminal that is electrically connected to the second conductive material, and a third conductive material for electrically connecting the first conductive material and the second conductive material.

REFERENCES:
patent: 5594275 (1997-01-01), Kwon et al.
patent: 6-252334 (1994-09-01), None
patent: 11 260999 (1999-09-01), None
patent: 2001 358248 (2001-12-01), None
patent: 2002-158312 (2002-05-01), None

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