Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2011-08-09
2011-08-09
Sandvik, Benjamin P (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S678000, C257S777000, C257SE21614, C257SE23085, C257SE25013, C257SE25018, C257SE25027, C438S109000
Reexamination Certificate
active
07994620
ABSTRACT:
A stacked semiconductor device includes a first semiconductor element bonded on a circuit base. The first semiconductor element is electrically connected to a connection part of the circuit base via a first bonding wire. A second semiconductor element is bonded on the first semiconductor element via a second adhesive layer with a thickness of 50 μm or more. The second adhesive layer is formed of an insulating resin layer whose glass transition temperature is 135° C. or higher and whose coefficient of linear expansion at a temperature equal to or lower than the glass transition temperature is 100 ppm or less.
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Mukaida Hideko
Yoshimura Atsushi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Khan Farid
Sandvik Benjamin P
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