Stacked semiconductor device

Details Stacked semiconductor device Stacked semiconductor device

1988-05-27

1992-07-07

Larkins, William D.

H01L 2702

Patent

active

051287323

ABSTRACT:
A stacked semiconductor device has three-dimensional alternate layers of iconductor elements and insulating layers each electrically insulating the adjacent upper and lower layers of semiconductor elements, formed on a single crystal semiconductor substrate. A semiconductor is deposited in openings formed respectively in the insulating layers to form single crystal semiconductor layers each having the same crystal axis as the single crystal semiconductor substrate respectively over the insulating layers, and semiconductor elements are formed respectively in a plurality of layers. The opening formed through the upper insulating layer reaches the lower layer of the semiconductor element immediately below the same upper insulating layer, and is formed at a position spaced apart horizontally from the opening formed through the lower insulating layer immediately below the same upper insulating layer. A semiconductor for forming the upper layer of a semiconductor having the same crystal axis as the lower layer of a semiconductor is deposited in the opening of the upper insulating layer so that satisfactory lateral epitaxial growth will occur over the insulating layer.

REFERENCES:
patent: 4472729 (1984-09-01), Shibata et al.
patent: 4489478 (1984-12-01), Sakurai

Affiliated with

Also associated with

Rating

Stacked semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stacked semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1833021