Amplifiers – With semiconductor amplifying device – Including plural stages cascaded
Reexamination Certificate
2007-05-08
2007-05-08
Choe, Henry (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural stages cascaded
C330S307000
Reexamination Certificate
active
11373051
ABSTRACT:
A method and apparatus provides techniques for electrically isolating switching devices in a stacked RF power amplifier, which prevents the switching devices from being subjected to high breakdown voltages. The isolation provided allows the power amplifier to be implemented on an integrated circuit.
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IBM Whitepaper, “SOI Technology: IBM's Next Advance in Chip Design”, http://www.at400.dk/pubfiles/soipaper.pdf, publication date unknown.
Chew, K.W., “Impact of Deep N-well Implantation on Substrate Noise Coupling and RF Transistor Performance for Systems-on-a-Chip Integration”, 32nd European Solid State Device Research Conference, Sep. 24-26, 2002.
Dupuis Timothy J.
Paul Susanne A.
Choe Henry
Johnson & Associates
Silicon Laboratories Inc.
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