Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition
Patent
1996-07-11
1997-11-04
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Having graded composition
257 14, 257101, 257103, 257 96, 257 97, 257 94, 257185, H01L 29205
Patent
active
056843097
ABSTRACT:
Stacked quantum well light emitting diodes include a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum gallium nitride or aluminum indium gallium nitride, wherein the ratios of indium to gallium differ in at least two of the stacked active layers. Preferably, the differing ratios of indium to gallium are selected to produce emission wavelengths from the stacked active layers, such that the emission wavelengths are combined to produce white light. Controlled amounts of hydrogen gas are introduced into a reaction chamber during formation of indium gallium nitride or aluminum indium gallium nitride to produce high quality indium gallium nitride or aluminum indium gallium nitride which incorporate large percentages of indium and possesses excellent optical and surface properties.
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Jordan et al., "White Organic Electroluminescence Devices", Appl. Phys. Lett., vol. 68, No. 9, Feb. 26, 1996, pp. 1192-1194.
Bedair Salah Mohamed
El-Masry Nadia Ahmed
McIntosh Forrest Gregg
Roberts John Claassen
Hardy David B.
North Carolina State University
Thomas Tom
LandOfFree
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