Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-05-05
2010-06-15
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S225000, C257S233000, C257S239000, C257SE27133
Reexamination Certificate
active
07737475
ABSTRACT:
Provided is a solid-state CMOS image sensor, specifically a CMOS image sensor pixel that has stacked photo-sites, high sensitivity, and low dark current. In an image sensor including an array of pixels, each pixel includes: a standard photo-sensing and charge storage region formed in a first region under a surface portion of a substrate and collecting photo-generated carriers; a second charge storage region formed adjacent to the surface portion of the substrate and separated from the standard photo-sensing and charge storage region; and a potential barrier formed between the first region and a second region underneath the first region and diverting the photo-generated carriers from the second region to the second charge storage region.
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Lee Eugene
McAndrews Held & Malloy Ltd.
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