Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-12-27
2005-12-27
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C438S099000
Reexamination Certificate
active
06979837
ABSTRACT:
The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.
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Okoroanyanwu Uzodinma
Pangrle Suzette K.
Tripsas Nicholas H.
VanBuskirk Michael A.
Advanced Micro Devices , Inc.
Amin & Turocy LLP
Jackson Jerome
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