Stacked multi-polysilicon layer capacitor

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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Details

357 51, H01G 410, H01L 2702

Patent

active

049145460

ABSTRACT:
A multilayer polysilicon structure is formed, where the various polysilicon layers and a conductive diffused region form plates of stacked capacitors, and electrodes contact each of the capacitor plates. The resulting capacitor structure inherently forms a series connected capacitor structure where each capacitor shares a plate with an adjacent capacitor. The structure is well suited for use in a voltage multiplier where each capacitor is charged to the supply voltage with the total voltage across the series connected capacitors being a multiple of the supply voltage. The dielectric layer between each of the polysilicon layers and between the first polysilicon layer and the diffused region may be nitride, oxide, or a combination of both.

REFERENCES:
patent: 4475964 (1984-10-01), Arizumi et al.
patent: 4805071 (1989-02-01), Hutter et al.

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