Stacked microelectronic assemblies with central contacts

Details Stacked microelectronic assemblies with central contacts Stacked microelectronic assemblies with central contacts

2006-06-13

2006-06-13

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Chip mounted on chip

C257S686000, C257S778000, C257S783000, C257S784000, C257S786000, C257S738000

Reexamination Certificate

active

07061121

ABSTRACT:
A stacked microelectronic assembly includes a dielectric element and a first and second microelectronic element stacked one on top of the other with the first microelectronic element underlying at least a portion of the second microelectronic element. The first microelectronic element and the second microelectronic element have front surfaces on which exposed on a central region of the front surface are contacts. A spacer layer may be provided under a portion of the second microelectronic element opposite a portion of the second microelectronic element overlying the first microelectronic element. Additionally, a third microelectronic element may be substituted in for the spacer layer so that the first microelectronic element and the third microelectronic element are underlying opposing sides of the second microelectronic element.

REFERENCES:
patent: 5977640 (1999-11-01), Bertin et al.
patent: 6818474 (2004-11-01), Kim et al.

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