Stacked metal silicide gate structure with barrier

Details Stacked metal silicide gate structure with barrier Stacked metal silicide gate structure with barrier

1987-05-22

1990-11-27

Munson, Gene M.

357 231, H01L 2962, H01L 2978

Patent

active

049740563

ABSTRACT:
A gate structure for integrated circuit devices which includes a work function layer, a low resistivity layer, and an electrically conductive barrier layer between the two other layers to prevent the other two layers from intermixing. The work function controlling layer is preferably selected from the group of tungsten, molybdenum, their silicides, or a combination thereof.

REFERENCES:
patent: 3573570 (1971-04-01), Fuller et al.
patent: 3614547 (1971-10-01), May
patent: 3633076 (1972-01-01), Heinz-Herbert et al.
patent: 4263058 (1981-04-01), Brown
patent: 4276557 (1981-06-01), Levinstein
patent: 4445134 (1984-04-01), Miller
patent: 4470189 (1984-09-01), Roberts
patent: 4584207 (1986-04-01), Wilson
J. Cuomo, Selective-Chemical Vapor Deposition of Tungsten, 1972, pp. 270-291, 3d Int'l Conference of Chemical Paper Deposition, American Nuclear Society Proceedings.

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