Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1994-03-31
1995-11-21
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 35, 505190, 505238, H01L 3922
Patent
active
054689732
ABSTRACT:
A stacked Josephson junction device includes a pair of copper oxide superconductor layers and a non-superconductor layer formed between the pair of oxide superconductor layers. The copper oxide superconductor layers are composed of a compound copper oxide having the composition expressed by the general formula:
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Harada Keizo
Itozaki Hideo
Bowers Courtney A.
Crane Sara W.
Sumitomo Electric Industries Ltd.
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