Stacked insulating film including yttrium oxide

Details Stacked insulating film including yttrium oxide Stacked insulating film including yttrium oxide

1988-12-06

1989-12-19

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 357 236, 357 51, 437 52, H01G 406, H01G 3075, H01L 2393, H01L 2170

Patent

active

048888206

ABSTRACT:
A capacitor, and a method for making the same, are disclosed, wherein one plate of the capacitor comprises silicon. The dielectric material of the capacitor includes a silicon nitride layer disposed adjacent the silicon plate, and a layer of yttrium oxide disposed thereover. The second plate of the capacitor is formed over the yttrium oxide layer. The silicon nitride provides a barrier to the diffusion of silicon into the yttrium oxide film if the structure is heated, providing for a high dielectric constant capacitor dielectric which has improved leakage characteristics.

REFERENCES:
patent: 3819990 (1974-06-01), Hayashi et al.
patent: 3962713 (1976-06-01), Kendall et al.
patent: 4734618 (1988-03-01), Matsudaira et al.
patent: 4742018 (1988-05-01), Kimura et al.
patent: 4761678 (1988-08-01), Goto
Gurvitch et al., "Study of Thermally Oxidized Yttrium Films on Silicon", Appl. Phys, Lett. 51(12), Sep. 21, 1987, pp. 919-921.
Manchanda et al., "Yttrium Oxide/Silicon Dioxide: A New Dielectric Structure for VLSI/ULSI Circuits", IEEE Electron Device Letters, vol. 9, No. 4, Apr., 1988; pp. 180-185.

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