Stacked electro-optically active organic diode with...

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257SE51003, C257SE51018, C438S082000, C438S099000

Reexamination Certificate

active

07960723

ABSTRACT:
A stacked electro-optically active organic diode has an anode electrode (102), a cathode electrode (162), a first electro-optically active organic layer (110) arranged between the electrodes (102, 162), and a second electro-optically active organic layer (130) arranged between said first active organic layer (110) and said cathode (162). A low electron affinity layer (120) is arranged between the first electro-optically active organic layer (110) and the second electro-optically active organic layer (130), and is formed of a first transparent inorganic semi-conductor material. A high electron affinity layer (121) is arranged between said second electro-optically active organic layer (130) and the low electron affinity layer (120), and is formed of a second transparent inorganic semiconductor material, wherein said second transparent inorganic semiconductor material has a higher electron affinity than said first inorganic semiconductor material. The low and high affinity layers (120, 121) constitute a connection layer of only two semiconductor (sub-)layers which allow for transparent, thick layers, and as a result the diode can be both efficient and reliable.

REFERENCES:
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patent: 2005/0248267 (2005-11-01), Gyoutoku et al.
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patent: 2010/0207115 (2010-08-01), Iou
patent: 1651011 (2006-04-01), None
Soon Moon Jeong et al; Improved Stability of Organic Light-Emitting Diode With Aluminum Cathodes Prepared by Ion Beam Assisted Deposition, Science and Technology of Advanced Materials, vol. 6, pp. 97-102, 2005.

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