Stacked double dense read only memory

Details Stacked double dense read only memory Stacked double dense read only memory

1983-09-08

1986-07-29

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 45, 357 59, 365104, H01L 2978, G11C 1700

Patent

active

046033416

ABSTRACT:
A read only memory array of stacked IGFET devices composed of first and second sub-arrays of field effect transistors. The first sub-array of first field effect transistors is formed in a substrate. Each of the first field effect transistor devices is responsive to a polysilicon gate electrode. The second sub-array of second field effect transistors is formed in a layer of laser annealed polysilicon material which overlies the first sub-array. The gate electrodes of the first field effect transistors act as the gate electrodes of the second field effect transistors.

REFERENCES:
patent: 4208727 (1980-06-01), Redwine et al.
patent: 4240097 (1980-12-01), Raymond, Jr.
patent: 4272880 (1981-06-01), Pashley

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