Stacked capacitor process using silicon nodules

Details Stacked capacitor process using silicon nodules Stacked capacitor process using silicon nodules

1994-03-18

1996-02-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

054928486

ABSTRACT:
A technique for making a MOST capacitor for use in a DRAM cell utilizes silicon nodules after metal etching. The silicon nodules are used as a mask to selectively form deep grooves in a polysilicon electrode of the capacitor.

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