Stacked capacitor process using BPSG precipitates

Details Stacked capacitor process using BPSG precipitates Stacked capacitor process using BPSG precipitates

1994-03-18

1995-11-14

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437919, 437 60, H01L 2170, H01L 2700

Patent

active

054666279

ABSTRACT:
A MOST capacitor for use in a DRAM is formed by using BPSG precipitates after densification as a mask for etching a BPSG layer to form BPSG islands. The BPSG islands are then used as a mask for etching a polysilicon layer to form pillars in the polysilicon layer.

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