Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-09-26
2006-09-26
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE33062, C349S038000
Reexamination Certificate
active
07112820
ABSTRACT:
A capacitor structure includes a first conductive layer, a first insulating layer disposed on a substrate in sequence, a second conductive layer disposed on portions of the first insulating layer, a second insulating layer disposed on the second conductive layer and the first insulating layer, a third conductive layer disposed on portions of the second insulating layer, a third insulating layer disposed on the third conductive layer and the second insulating layer, and a fourth conductive layer disposed on the third insulating layer. The third conductive layer and the fourth conductive layer are electrically connected to the first conductive layer and the second conductive layer through at least one first contact hole adjacent to the second conductive layer and at least one second contact hole, respectively.
REFERENCES:
patent: 5182661 (1993-01-01), Ikeda et al.
patent: 6259149 (2001-07-01), Burkhardt et al.
patent: H09-162412 (1997-06-01), None
patent: 2001-265253 (2001-09-01), None
Chang Chih-Chin
Yeh Kuang-Chao
Arena Andrew O.
AU Optronics Corp.
Hsu Winston
Lee Eddie
LandOfFree
Stacked capacitor having parallel interdigitized structure... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Stacked capacitor having parallel interdigitized structure..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked capacitor having parallel interdigitized structure... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3528221