Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-08-23
1998-10-27
Nuzzolillo, M.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438734, 438396, 438397, 438712, 438210, 216 6, H01L 21465
Patent
active
058277838
ABSTRACT:
A method of forming a capacitor that has improved charge storage capacity in a high density memory device that has shallow trench isolation regions and a capacitor produced by the method are provided. The method includes the step of forming an oxide spacer that consists of a plurality of oxide layers deposited by two alternating methods of thermal CVD and plasma CVD. After a contact hole is first etched by a plasma etching technique, the hole is again decoratively etched by an etchant such as hydrogen fluoride which has a high selectivity toward oxide layers formed by the plasma CVD method and a low selectivity toward oxide layers formed by the thermal CVD method. As a result, a corrugated side-wall of the contact hole is formed which affords the capacitor cell with an increased surface area leading to an improved charge storage capacity.
REFERENCES:
patent: 5316982 (1994-05-01), Taniguchi
patent: 5330928 (1994-07-01), Tseng
patent: 5347696 (1994-09-01), Willer et al.
patent: 5384276 (1995-01-01), Ogawa et al.
patent: 5395784 (1995-03-01), Lu et al.
patent: 5573967 (1996-11-01), Tseng
Chang Thomas
Hsia Liang-Choo
Mosel Vitelic Inc.
Nuzzolillo M.
VerSteeg Steven H.
LandOfFree
Stacked capacitor having improved charge storage capacity does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Stacked capacitor having improved charge storage capacity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked capacitor having improved charge storage capacity will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1613630